Physics Lab Equipment

LEAI-75 Magnetoresistance & Giant Magnetoresistance Effect

LEAI-75 Magnetoresistance & Giant Magnetoresistance Effect


  • Compact design

  • Ample experimental examples

  • Ideal for solid-state physics teaching


The resistance change of a material induced by a magnetic field is called the magnetoresistive effect, which includes normal magnetoresistance (OMR), anisotropic magnetoresistance (AMR), giant magnetoresistance effect (GMR), colossal magnetoresistance (CMR), tunneling magnetoresistance (TMR), and so on.


This instrument provides three types of magneto-resistance sensors, namely, a multilayer membrane GMR sensor, a spin valve GMR sensor, and an anisotropic magneto-resistance sensor. It helps students understand the principles and applications of different magneto-resistance effects, and is suitable for material physics experiments as well as modern physics experiments at colleges and universities.

The instruction manual contains comprehensive materials including experimental configurations, principles and step-by-step instructions. Please click Experiment Theory and Contents to find more information about this apparatus.


Using this apparatus, the following experiments can be accomplished:


1. Understand magneto-resistance effects and measure the magnetic resistance Rb of three different materials.

2. Plot diagram of Rb/R0 with B and find the max value of resistance relative change (Rb-R0)/R0.

3. Learn how to calibrate magneto-resistance sensors & calculate the sensitivity of three magneto-resistance sensors.

4. Acquire the relationship of sensor output voltage vs. input current in a current-carrying wire (i.e. calibrate a GMR current sensor).

5. Plot the magnetic hysteresis loop of a spin-valve GMR.

Main Parts and Specifications

Multilayer GMR sensor

linear range: 0.15 ~ 1.05 mT; sensitivity: 30.0 ~ 42.0 mV/V/mT

MR resistance: 5.0 kΩ ± 1.0 kΩ, precise resistor: 1.20 kΩ

Spin valve GMR sensor

linear range: -0.81 ~ 0.87 mT; sensitivity: 13.0 ~ 16.0 mV/V/mT

MR resistance: 1.3 kΩ ± 0.26 kΩ, precise resistor: 360 kΩ

Anisotropic magnetoresistance sensor

linear range: -0.6 ~ 0.6 mT; sensitivity: 8.0 ~ 12.0 mV/V/mT

MR resistance: 1.0 kΩ ± 0.2 kΩ, precise resistor: 270 kΩ

Sensor power source5 VDC
Helmholtz coilnumber of turns: 200 per coil; radius: 100 mm
Helmholtz coil constant current source0 - 1.2 A adjustable
Measurement constant current source0 - 5 A adjustable

      Magnetoresistance & Giant Magnetoresistance Effect.png  

V vs B of spin valve GMR sensor

(Click graph to enlarge)

         Magnetoresistance & Giant Magnetoresistance Effect.png

V vs B of multilayer GMR sensor

(Click graph to enlarge)

      Magnetoresistance & Giant Magnetoresistance Effect.png

V vs B of AMR sensor

(Click graph to enlarge)

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