Note: oscilloscope not included
Features
Simple and reliable design
Comprehensive experiment content
Cost-effective
Introduction
Magnetoresistive sensors are widely used in fields such as communications and industrial instrumentation due to their high sensitivity and strong resistance to interference. Applications include digital compasses, vehicle testing, navigation systems, counterfeit detection, and position measurement. Among magnetoresistive sensors, the InSb sensor stands out for its affordability and high sensitivity.
This experimental apparatus offers a simple yet informative approach to studying the magnetoresistive effect. It employs a GaAs Hall sensor to measure both the magnetic field intensity and the magneto-resistance values of an InSb sensor under varying magnetic field conditions.
With this apparatus, students can perform the following experiments:
1. Investigate how the resistance of an InSb sensor changes with applied magnetic field intensity and determine the empirical relationship.
2. Plot the resistance of the InSb sensor against magnetic field intensity.
3. Explore the AC characteristics of an InSb sensor in a weak magnetic field, including the frequency-doubling effect.
The instruction manual includes detailed experimental configurations, theoretical principles, step-by-step procedures, and examples of experimental results. For further details, click Experiment Theory and Contents to learn more about this apparatus.
Main Parts and Specifications
Description | Specifications |
Power supply of magneto-resistance sensor | 0-3 mA adjustable |
Digital voltmeter | range 0-1.999 V resolution 1 mV |
Digital milli-Teslameter | range 0-199.9 mT, resolution 0.1 mT |