Note: oscilloscope not included
Due to the high sensitivity and strong anti-interference ability, magnetoresistive sensors have wide applications in communications and industrial instrumentation such as: digital compass, vehicle testing, navigation systems, counterfeit detection, position measurement, and so on. InSb sensor is a typical magneto-resistance sensor due to its affordability and high sensitivity.
This experimental apparatus is simple and informative. It uses a GaAs Hall sensor to measure the magnetic field intensity and the magneto-resistance values of an InSb magnetoresistive sensor under different magnetic field intensities.
Using this instrument, the following experiments can be conducted:
1. Study the resistance change of an InSb sensor vs the applied magnetic field intensity; find the empirical formula.
2. Plot InSb sensor resistance vs magnetic field intensity.
3. Study the AC characteristics of an InSb sensor under a weak magnetic field (frequency-doubling effect).
The instruction manual contains experimental configurations, principles, step-by-step instructions, and examples of experiment results. Please click Experiment Theory and Contents to find more information about this apparatus.
Main Parts and Specifications
|Power supply of magneto-resistance sensor||0-3 mA adjustable|
|Digital voltmeter||range 0-1.999 V resolution 1 mV|
|Digital milli-Teslameter||range 0-199.9 mT, resolution 0.1 mT|
Curve of magnetoresistive effect
Frequency doubling effect