V vs B of spin valve GMR sensor
(Click graph to enlarge)
V vs B of multilayer GMR sensor
(Click graph to enlarge)
V vs B of AMR sensor
(Click graph to enlarge)
Features
Compact design
Ample experimental examples
Ideal for solid-state physics teaching
Introduction
The resistance change of a material induced by a magnetic field is called the magnetoresistive effect, which includes normal magnetoresistance (OMR), anisotropic magnetoresistance (AMR), giant magnetoresistance effect (GMR), colossal magnetoresistance (CMR), tunneling magnetoresistance (TMR), and so on.
This instrument provides three types of magneto-resistance sensors, namely, a multilayer membrane GMR sensor, a spin valve GMR sensor, and an anisotropic magneto-resistance sensor. It helps students understand the principles and applications of different magneto-resistance effects, and is suitable for material physics experiments as well as modern physics experiments at colleges and universities.
The instruction manual contains comprehensive materials including experimental configurations, principles and step-by-step instructions. Please click Experiment Theory and Contents to find more information about this apparatus.
Using this apparatus, the following experiments can be accomplished:
1. Understand magneto-resistance effects and measure the magnetic resistance Rb of three different materials.
2. Plot diagram of Rb/R0 with B and find the max value of resistance relative change (Rb-R0)/R0.
3. Learn how to calibrate magneto-resistance sensors & calculate the sensitivity of three magneto-resistance sensors.
4. Acquire the relationship of sensor output voltage vs. input current in a current-carrying wire (i.e. calibrate a GMR current sensor).
5. Plot the magnetic hysteresis loop of a spin-valve GMR.
Main Parts and Specifications
| Description | Specifications |
| Multilayer GMR sensor | linear range: 0.15 ~ 1.05 mT; sensitivity: 30.0 ~ 42.0 mV/V/mT MR resistance: 5.0 kΩ ± 1.0 kΩ, precise resistor: 1.20 kΩ |
| Spin valve GMR sensor | linear range: -0.81 ~ 0.87 mT; sensitivity: 13.0 ~ 16.0 mV/V/mT MR resistance: 1.3 kΩ ± 0.26 kΩ, precise resistor: 360 kΩ |
| Anisotropic magnetoresistance sensor | linear range: -0.6 ~ 0.6 mT; sensitivity: 8.0 ~ 12.0 mV/V/mT MR resistance: 1.0 kΩ ± 0.2 kΩ, precise resistor: 270 kΩ |
| Sensor power source | 5 VDC |
| Helmholtz coil | number of turns: 200 per coil; radius: 100 mm |
| Helmholtz coil constant current source | 0 - 1.2 A adjustable |
| Measurement constant current source | 0 - 5 A adjustable |
V vs B of spin valve GMR sensor
(Click graph to enlarge)
V vs B of multilayer GMR sensor
(Click graph to enlarge)
V vs B of AMR sensor
(Click graph to enlarge)
