Physics Lab Equipment

LEOI-50A Diode-Pumped Solid-State Laser Demonstrator - Enhanced Model

LEOI-50A Diode-Pumped Solid-State Laser Demonstrator - Enhanced Model

Features

  • Laser diode pumping output of 2 W at 808 nm with TE cooling for temperature control


  • Optional Q-switching approach

  • Alignment diode laser and optical power meter included

  • Laser safety googles for OD4+ protection against 808 nm and 1064 nm laser radiation








Introduction

LEOI-50A is designed for teaching nonlinear optical experiments at universities and colleges. It can help students understand the theory of a diode-pumped solid-state (DPSS) laser with frequency doubling technique. A solid-state laser with Nd: YAG as the gain material, which is pumped by a semiconductor laser at 808 nm, emits infrared light at 1.064 μm. By incorporating a KTP crystal into the laser cavity to generate frequency-doubled green light, it is possible to observe frequency doubling phenomenon, and measure frequency doubling efficiency, phase matching angle and other basic parameters. By placing an absorptive material into the cavity to alter gain amount, Q-factor can be changed. This apparatus can be used to conduct the following experiments:

 

A. Characterization of 808 nm laser diode

1. Plot electro-optic curve, and determine threshold current and gain slope

2. Wavelength tuning to absorption peak of YAG crystal

3. Fluorescence lifetime measurement of YAG material excited by 808 nm laser

 

B. 1064 nm laser generation from YAG crystal pumped by 808 nm laser diode

1. Mode matching: observe relationship between pump laser spot and output power of 1064 nm laser

2. Wavelength matching: change 808 nm laser wavelength while observing output power of 1064 nm laser

3. Input-output efficiency testing: change 808 nm laser power while measuring output power of 1064 nm laser

 

C. Frequency-doubling technology

1. Observe transverse mode of 532 nm laser

2. Acquire relationship between 532 nm laser output power and pumping power

3. Angle matching: adjust angle of KTP crystal in cavity to find the best matching angle

 

D. Q-switching technology (optional)

1. Q-switching: place Q-switching material into cavity to observe pulsed output of 1064 nm laser

2. Q-switching: change 808 nm laser power to observe change in pulse width and frequency of Q-switched laser


Parts and Specifications

DescriptionSpecificationsQty
Optical benchLength: 0.8 m1
Laser diode2 W at 808 nm with TE cooling1
Laser diode driver0 ~ 3 A with temperature controller1
Alignment diode laser4 mW at 650 nm with 2-D adjustable holder1
Collimating lensIncl 2-D adjustable holder, ± 2.5 mm1
Focusing lensIncl 2-D adjustable holder, ± 2.5 mm1
YAG crystalIncl 4-D adjustable holder1
KTP crystalIncl 5-D adjustable holder1
Laser power meter2 mW/20 mW/200 mW/2 W1
Photo diode
1
Partial reflecting mirrorRadius of curvature: 250 mm; reflectance: 95%1
Interference filterPassband wavelength: 532 nm1
Interference filterPassband wavelength: 1064 nm1
Infrared viewing card
1
Alignment aperture
1
Laser safety goggles

OD = 4+ for 808 nm and 1064 nm

1
Passive Q-switching crystal (optional)

Cr4+:YAG

1
Power cord
2
Instruction manual
1

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Frequency doubling


1. 808 nm laser

2. Collimating lens

3. Focusing lens

4. Nd:YAG crystal

5. KTP crystal

6. Partial mirror

7. Pinhole

8. 650 nm alignment laser


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Q-switching


1. 808 nm laser

2. Collimating lens

3. Focusing lens

4. Nd:YAG crystal

5. Q-switching crystal

6. Partial mirror

7. Photodiode

8. Pinhole

9. 650 nm alignment laser


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Q-switched laser output

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